PART |
Description |
Maker |
SPW |
Special Purpose, High Frequency Load (Tubes), High Stability and Excellent High Frequency Characteristics, Particularly Suited for High Frequency Applications
|
Vishay
|
FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc. http:// Cornell Dubilier Electronic... Cornell Dubilier Electr...
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
15GN01MA |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
15GN01SA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
FP1007R1-R17-R FP1007R2-R17-R FP1007R3-R17-R FP100 |
High Current, High Frequency, Power Inductors
|
Cooper Bussmann, Inc.
|
2SA1683 2SC4414 |
High-Frequency General-Purpose Amp/ High-Frequency Power Amp Applications High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications
|
SANYO[Sanyo Semicon Device]
|
HCP0704 HCP0704-1R0-R HCP0704-1R8-R HCP0704-2R3-R |
1 ELEMENT, 3.3 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 0704, ROHS COMPLIANT High Current, High Frequency, Power Inductors
|
Cooper Bussmann, Inc.
|
KSC945Y KSC945CG KSC945CL KSC945CO KSC945CR KSC945 |
NPN Epitaxial Silicon Transistor Audio Frequency Amplifier & High Frequency OSC. Audio Frequency Amplifier & High Frequency OSC.
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
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